Accession Number : AD0712484

Title :   IMPACT IONIZATION, BULK NEGATIVE DIFFERENTIAL CONDUCTIVITY AND OTHER NONEQUILIBRIUM CARRIER PHENOMENA IN InSb,

Corporate Author : BOEING SCIENTIFIC RESEARCH LABS SEATTLE WASH

Personal Author(s) : Dick,C. L. ; Ancker-Johnson,B.

Report Date : SEP 1970

Pagination or Media Count : 114

Abstract : The hot electron effect, injection, impact ionization and bulk negative differential conductivity are nonequilibrium carrier phenomena that some semiconductors exhibit. In particular, all four phenomena affect conduction in InSb in a strongly interrelated manner. This work shows the interrelationship of these four nonequilibrium phenomena in InSb and describes two new effects: a temporal and spatial relationship between type-N and type-S bulk negative differential conductivity (BNDC) in n-type InSb and the existence of an impact ionization wavefront which is reponsible for the initiation of this carrier generation mechanism in p-type InSb. These results are presented in two parts: Part I contains a discussion of all these nonequilibrium carrier phenomena in n-type InSb, and Part II treats injection and impact ionization in p-type InSb. (Author)

Descriptors :   (*SEMICONDUCTORS, PLASMA MEDIUM), (*INDIUM ANTIMONIDES, ELECTRICAL CONDUCTIVITY), (*CARRIERS(SEMICONDUCTORS), MOBILITY), HALL EFFECT, SINGLE CRYSTALS, ELECTRIC FIELDS, IONIZATION, CRYOGENICS

Subject Categories : Solid State Physics

Distribution Statement : APPROVED FOR PUBLIC RELEASE