Accession Number : AD0712936

Title :   PROPERTIES OF p-n JUNCTIONS IN CADMIUM SULFIDE AND CONSTRUCTION OF PHOTOELECTRIC TRANSDUCERS,

Corporate Author : FOREIGN TECHNOLOGY DIV WRIGHT-PATTERSON AFB OHIO

Personal Author(s) : Knev,Stefan ; Stoyanov,Vasil ; Stefanov,Rodoslav

Report Date : 24 JUN 1970

Pagination or Media Count : 8

Abstract : The development of efficient photoelectric converters based on CdS is described. The photoelectric p-n junctions were made as follows: Cadmium sulfide powder was pressed into small tablets under a pressure of several hundred kilograms per cm(superscript 2). The tablets were baked for 15 min under closely controlled conditions to form pure monocrystals (size, up to 50 mu) on one side of the tablet, i.e., to form the working surface of the converter. This working surface was then immersed for several seconds in a boiling, saturated water solution of copper sulfate to cover it with a thin coating which contained p-type carriers and was presumed to be formed by the chemical reaction given. The coated tablet was then heated at a temperature of 350 degrees centigrade for about 20 sec. The converter was completed by depositing electrodes on both sides of the tablet. Efficiencies of the order of 8 percent were obtained with the described photoelectric converters. (Author)

Descriptors :   (*SEMICONDUCTORS, INTERFACES), (*CADMIUM SULFIDES, PHOTOELECTRIC EFFECT), (*SOLAR CELLS, MANUFACTURING), PERFORMANCE(ENGINEERING), USSR

Subject Categories : Electric Power Production and Distribution
      Mfg & Industrial Eng & Control of Product Sys
      Solid State Physics

Distribution Statement : APPROVED FOR PUBLIC RELEASE