Accession Number : AD0712941

Title :   THE RECTIFYING PROPERTIES OF AN ANTIMONY-ANTIMONY SELENIDE DIFFUSED JUNCTION,

Corporate Author : FOREIGN TECHNOLOGY DIV WRIGHT-PATTERSON AFB OHIO

Personal Author(s) : Koren,N. N. ; Sirota,N. N.

Report Date : 28 MAY 1970

Pagination or Media Count : 5

Abstract : The rectifying properties were studied for a junction prepared by the reactive diffusion of Se from the vapor phase into the Sb. An analysis of the v amp. characteristic shows that as the thickness of the Sb2Se3 layer increases, the slope of the linear segment in the transmission direction decreases; the right branch shifts to the right, which corresponds to a lower value of the d.c. at the given voltage. The low values of the d.c. (10-20 ma.) and the smoother increase in the d.c. with increasing voltage are due to the large resistance of the vol. of the semiconducting film. For low voltages, the d.c. increases exponentially with the applied voltage. The rectification coefficient depends on the layer thickness, and is 1000 to 10,000 for a 3-5 micrometer film. (Author)

Descriptors :   (*SEMICONDUCTING FILMS, ELECTRICAL RESISTANCE), (*SEMICONDUCTOR DEVICES, RECTIFIERS), ANTIMONY COMPOUNDS, SELENIDES, DIFFUSION, USSR

Subject Categories : Solid State Physics

Distribution Statement : APPROVED FOR PUBLIC RELEASE