Accession Number : AD0713021

Title :   SIMULATION OF THE LAPLACE TRANSFORM BY MEANS OF D.C. POTENTIAL IN SEMICONDUCTOR MATERIALS.

Descriptive Note : Final rept.,

Corporate Author : TENNESSEE UNIV SPACE INST TULLAHOMA

Personal Author(s) : Huebschmann,E. C. ; Pender,C. W.

Report Date : SEP 1970

Pagination or Media Count : 60

Abstract : Research has been conducted into techniques for mechanically representing or simulating selected transfer functions. The technique used is based on the logarithmic potential or an electrical source and sink on a two-dimensional conducting sheet. Various semiconductor materials have been investigated and a suitable material has been chosen for use in a transfer function simulation device. Several materials were considered and are still under consideration for an improved device. The semiconductor material used in the device described in this report was chosen due to availability, performance predictability, and flexibility. Experiments with several devices have resulted in a notion of an optimum size for the conducting plane in the device. Investigation has revealed information concerning size relative to uniformity of conducting plane, contact difficulties, and density of pickoff contacts. (Author)

Descriptors :   (*ELECTRICAL NETWORKS, MATHEMATICAL ANALYSIS), (*CONTROL SYSTEMS, MATHEMATICAL MODELS), (*TRANSFER FUNCTIONS, SIMULATION), POTENTIAL THEORY, INTEGRAL TRANSFORMS, SEMICONDUCTORS, COMPLEX VARIABLES, SILICON

Subject Categories : Electrical and Electronic Equipment
      Theoretical Mathematics
      Operations Research

Distribution Statement : APPROVED FOR PUBLIC RELEASE