Accession Number : AD0713476
Title : DIELECTRIC FIELD COMPUTATIONS IN SEMICONDUCTOR OXIDE INTEGRATED CIRCUITS.
Descriptive Note : Technical rept.,
Corporate Author : CULLEN COLL OF ENGINEERING HOUSTON TEX
Personal Author(s) : Cannon,Don L.
Report Date : JUL 1970
Pagination or Media Count : 82
Abstract : The report deals with the application of the point relaxation method for the numerical solution of Laplace's or Poisson's equations in multi-dielectric regions in semiconductor integrated circuits. In particular, the type of geometry considered in this report is a rectangular or square region whose boundary potentials may or may not be specified, with a dielectric interface parallel to one of the boundaries. This type of problem is very difficult to solve analytically and yet it is an important problem in planar integrated circuit analysis. The structure is essentially the same as the oxide over silicon or as the junction regions in such a device. Often the electrical field or the static temperature distribution of such regions are required and the research described in this report provides a technique for determining such information. (Author)
Descriptors : (*INTEGRATED CIRCUITS, POTENTIAL THEORY), (*SEMICONDUCTOR DEVICES, VOLTAGE), PARTIAL DIFFERENTIAL EQUATIONS, BOUNDARY VALUE PROBLEMS, NUMERICAL ANALYSIS, NUMERICAL INTEGRATION, COMPUTER PROGRAMS, TEMPERATURE, THERMAL STABILITY, THESES
Subject Categories : Electrical and Electronic Equipment
Electricity and Magnetism
Distribution Statement : APPROVED FOR PUBLIC RELEASE