Accession Number : AD0713602

Title :   WIDE-BAND HOT-CARRIER DIODE GATE WITH APPLICATION TO ELECTRON-HOLE PLASMAS,

Corporate Author : BOEING SCIENTIFIC RESEARCH LABS SEATTLE WASH

Personal Author(s) : Lantz,R. M. ; Robbins,W. P. ; Fossum,H. J. ; Ancker-Johnson,B.

Report Date : SEP 1970

Pagination or Media Count : 19

Abstract : A sampling or tone-burst gating system using hot-carrier diodes has been designed and shown to have the following characteristics: band width, dc to 1GHz; rise and fall times, typically = or < 3nsec and 5nsec; power capacility, about 100mW; gating pulse frquency, 10Hz to 1MHz; gating pulse width, 50nsec to 5msec; leakage, >45db down at 100kHz and about 24 db down at 500MHz; gate isolation from common ground reference, >60db at all frequencies; input and output impedances, adjustable to match source and load. As this gating system consists of two identical gates in parallel, it presents a constant impedance to prevent undesirable loading perturbations of the rf source. The gate can be synchronized with an rf signal whose frequency is = or < 1GHz and with the described design changes, may be synchronized with about 10GHz signal. (Author)

Descriptors :   (*GATES(CIRCUITS), DESIGN), (*SEMICONDUCTORS, PLASMA MEDIUM), INDIUM ANTIMONIDES, SEMICONDUCTOR DIODES, PULSE GENERATORS, SYNCHRONIZATION(ELECTRONICS), CARRIERS(SEMICONDUCTORS)

Subject Categories : Electrical and Electronic Equipment
      Solid State Physics

Distribution Statement : APPROVED FOR PUBLIC RELEASE