Accession Number : AD0714267

Title :   On the Dislocation Mobility in Germanium at High Stresses and Low Temperatures.

Descriptive Note : Technical rept.,

Corporate Author : ILLINOIS UNIV URBANA DEPT OF METALLURGY AND MINING ENGINEERING

Personal Author(s) : Walson,Robert P. ; Birnbaum,Howard K.

Report Date : 30 SEP 1970

Pagination or Media Count : 10

Abstract : The motion of dislocations in germanium at 300K was studied at very high stresses. No evidence was found for any dislocation motion at stresses up to tau/G = 0.017. Both grown-in and freshly introduced dislocations were studied using etch pitting techniques. The results are shown to be consistent with the thermally activated kink model and to be in disagreement with the predictions of the kink tunneling model proposed by Gilman. (Author)

Descriptors :   (*SEMICONDUCTORS, GERMANIUM), (*DISLOCATIONS, MOBILITY), STRESSES, TUNNELING(ELECTRONICS), ETCHED CRYSTALS, DEFORMATION

Subject Categories : Metallurgy and Metallography
      Solid State Physics

Distribution Statement : APPROVED FOR PUBLIC RELEASE