Accession Number : AD0714267
Title : On the Dislocation Mobility in Germanium at High Stresses and Low Temperatures.
Descriptive Note : Technical rept.,
Corporate Author : ILLINOIS UNIV URBANA DEPT OF METALLURGY AND MINING ENGINEERING
Personal Author(s) : Walson,Robert P. ; Birnbaum,Howard K.
Report Date : 30 SEP 1970
Pagination or Media Count : 10
Abstract : The motion of dislocations in germanium at 300K was studied at very high stresses. No evidence was found for any dislocation motion at stresses up to tau/G = 0.017. Both grown-in and freshly introduced dislocations were studied using etch pitting techniques. The results are shown to be consistent with the thermally activated kink model and to be in disagreement with the predictions of the kink tunneling model proposed by Gilman. (Author)
Descriptors : (*SEMICONDUCTORS, GERMANIUM), (*DISLOCATIONS, MOBILITY), STRESSES, TUNNELING(ELECTRONICS), ETCHED CRYSTALS, DEFORMATION
Subject Categories : Metallurgy and Metallography
Solid State Physics
Distribution Statement : APPROVED FOR PUBLIC RELEASE