Accession Number : AD0714284
Title : Cadmium Telluride Modulator Material.
Descriptive Note : Interim technical rept. 1 May-31 Oct 70,
Corporate Author : HUGHES RESEARCH LABS MALIBU CALIF
Personal Author(s) : Gentile,A. L. ; Kyle,N. R. ; Kiefer,J. E.
Report Date : NOV 1970
Pagination or Media Count : 37
Abstract : The growth of single crystal CdTe by a modified Bridgman technique is being investigated to improve the material for use in infrared modulator devices. A systematic variation of selected crystal growth parameters together with quench and post-growth anneal parameters is being carried out to accomplish this goal. Of primary importance are those growth parameters which relate to removal of heat from the growing crystal. The use of a conductive metal heat-sink at the tip of the growing crystal combined with a specific growth rate and temperature gradient has shown significant improvement in crystallinity yielding modulator rods of 0.5 x 0.5 x 2.5 cm dimensions. High resistivity single crystal material with low absorption has been obtained both as grown and thermally annealed following growth. (Author)
Descriptors : (*CRYSTAL GROWTH, TELLURIDES), (*MODULATORS, *ELECTROOPTICS), (*INFRARED RADIATION, MODULATION), CADMIUM COMPOUNDS, GAS LASERS, SINGLE CRYSTALS, ELECTRICAL RESISTANCE, COHERENT RADIATION, INFRARED LASERS
Subject Categories : Crystallography
Distribution Statement : APPROVED FOR PUBLIC RELEASE