Accession Number : AD0714441

Title :   Photoconductivity in Some III-V Alloys,

Corporate Author : OTTAWA UNIV (ONTARIO) DEPT OF PHYSICS

Personal Author(s) : Taylor,A. E. ; Fortin,E.

Report Date : 02 APR 1970

Pagination or Media Count : 6

Abstract : Photoconducting properties of GaAs-InAs and GaAs-GaSb alloys were investigated at room and low temperatures. The peaks in the photoresponse were found to vary smoothly across the alloy systems. Band gap values obtained from the spectral sensitivity curves confirmed the parabolic variation of energy gaps as a function of the alloy concentration, as previously found in electrical conductivity and optical absorption measurements. The room temperature detectivity of the samples was between 200,000 and 8,000,000 cm (Hz to the 1/2 power)/W for wavelengths varying from 0.8 to 3.5 micrometers, depending on alloy composition. (Author)

Descriptors :   (*SEMICONDUCTORS, *INFRARED PHOTOCONDUCTORS), (*GALLIUM ARSENIDES, *PHOTOCONDUCTIVITY), (*INFRARED DETECTORS, FEASIBILITY STUDIES), SOLID SOLUTIONS, INDIUM COMPOUNDS, GALLIUM COMPOUNDS, ANTIMONY ALLOYS, ARSENIDES, BAND THEORY OF SOLIDS, CRYOGENICS, CANADA

Subject Categories : Infrared Detection and Detectors
      Solid State Physics

Distribution Statement : APPROVED FOR PUBLIC RELEASE