Accession Number : AD0714444

Title :   On the Determination of Surface Recombination Velocity from the Transient Response of MIS Structures,

Corporate Author : TORONTO UNIV (ONTARIO) DEPT OF ELECTRICAL ENGINEERING

Personal Author(s) : Salama,C. A. T. ; Holmes,F.

Report Date : 11 FEB 1970

Pagination or Media Count : 3

Abstract : ZERBST has developed a method of measuring both minority carrier lifetime and surface recombination velocity from the transient response of MIS capacitors to a depleting pulse when the capacitors are initially biased in the inversion region. This method is based on an equation relating the rate of change of the capacitance C of the MIS structure, the lifetime pi and the surface recombination velocity s. The report discusses technique for handling the experimental data that can simplify the necessary computation and partially automate the measurements of lifetime and surface recombination velocity.

Descriptors :   (*CARRIERS(SEMICONDUCTORS), LIFE EXPECTANCY), SEMICONDUCTOR DEVICES, CAPACITORS, TRANSIENTS, MATHEMATICAL ANALYSIS, MEASURING INSTRUMENTS, SURFACES, CANADA

Subject Categories : Test Facilities, Equipment and Methods
      Solid State Physics

Distribution Statement : APPROVED FOR PUBLIC RELEASE