Accession Number : AD0714533

Title :   Study and Development of Luminescence and Laser Operation in Various III-V and II-VI Semiconductors.

Descriptive Note : Final rept. 1 Feb 69-31 May 70,

Corporate Author : ILLINOIS UNIV URBANA MATERIALS RESEARCH LAB

Personal Author(s) : Holonyak,Nick , Jr

Report Date : JUL 1970

Pagination or Media Count : 56

Abstract : Carrier recombination and laser processes in semiconductors, mainly GaAs, are described. Measurements on GaAs over a wide doping range are reported. The electron-hole-lattice interaction and its 16meV reduction of the laser photon energy in GaAs is ascribed in large part to electron-electron interaction. Laser operation of p-n junctions in GaAs doped with amphoteric impurities is demonstrated. Optical pumping with a Ga(AsP) laser diode has been used to excite photoluminescence and laser operation of n+/n/n+ layered structures, and to perform spectroscopic studies on Gunn oscillator wafers. A method is described for coupling laser beams into thin structures (about one micrometer) and for easy coupling of optical signals between various thin structures. (Author)

Descriptors :   (*LASERS, SEMICONDUCTOR DEVICES), (*SEMICONDUCTORS, LUMINESCENCE), CARRIERS(SEMICONDUCTORS), GALLIUM ARSENIDES, CADMIUM SELENIDES, OPTICAL PUMPING, BAND THEORY OF SOLIDS, EPITAXIAL GROWTH, DOPING, CRYOGENICS

Subject Categories : Lasers and Masers
      Solid State Physics

Distribution Statement : APPROVED FOR PUBLIC RELEASE