Accession Number : AD0714742

Title :   Effect of Irradiation with a High-Power Electron Beam on the Structure and Microhardness of a Silicon Single Crystal,

Corporate Author : FOREIGN TECHNOLOGY DIV WRIGHT-PATTERSON AFB OHIO

Personal Author(s) : Alekhin,V. P. ; Gridneva,I. V. ; Gusev,O. V. ; Milman,Yu. V. ; Trefilov,V. I.

Report Date : 27 AUG 1970

Pagination or Media Count : 11

Abstract : Irradiation of (110) plane of an n-Si single crystal with an electron beam of about 10 (superscript 7) W/cm (superscript 2) resulted in 3 types of deformation. The dislocation d. (Rho) in the 2nd and 3rd regions was about 10 (superscript 7) and is greater than 10, superscript 8/cm (superscript 2). The single-crystal state did not change in any of the 3 regions. The microhardness H (subscript v) changed sharply on annealing at 300 degrees. Annealing at 600 degrees removed all strain, but H (subscript v) did not increase above 1000 kg/mm (superscript 2). The increase of Rho of different specimens is assocd. with the decrease in H (subscript v). (Author)

Descriptors :   (*SEMICONDUCTORS, *DAMAGE), (*SILICON, ELECTRON IRRADIATION), CRYSTAL DEFECTS, CRYSTAL SUBSTRUCTURE, DISLOCATIONS, ETCHED CRYSTALS, HARDNESS, ANNEALING, USSR, (U)USSR

Subject Categories : Radioactiv, Radioactive Wastes & Fission Prod
      Solid State Physics

Distribution Statement : APPROVED FOR PUBLIC RELEASE