Accession Number : AD0714799

Title :   The Mechanism of Growth of Whiskers from the Gas Phase,

Corporate Author : FOREIGN TECHNOLOGY DIV WRIGHT-PATTERSON AFB OHIO

Personal Author(s) : Borisov,E. V. ; Taskaev,I. P.

Report Date : 17 AUG 1970

Pagination or Media Count : 19

Abstract : The mechanism responsible for the growth of Si, Ge, and other types of whiskers from the gas phase is discussed in the light of the latest theoretical and experimental evidence. The crystallization process is treated as being due to a mechanism in which vortices carry particles of crystallizing material along as a result of the pressure difference between the outside and inside of the vortex system. Formulae for determining the rate of growth of such whiskers are derived, allowance being made for the surface diffusion of adsorbed atoms along the sides of the growing whiskers.

Descriptors :   (*WHISKERS(CRYSTALS), *CRYSTAL GROWTH), SEMICONDUCTORS, SILICON, GERMANIUM, VAPOR PLATING, USSR

Subject Categories : Crystallography

Distribution Statement : APPROVED FOR PUBLIC RELEASE