Accession Number : AD0714901

Title :   Automatic Measurement of Charge Storage in MNOS Memory Structures,

Corporate Author : TORONTO UNIV (ONTARIO) DEPT OF ELECTRICAL ENGINEERING

Personal Author(s) : Salama,C. A. T. ; Taylor,G. W.

Report Date : 29 JAN 1970

Pagination or Media Count : 3

Abstract : An automatic system for the measurement of charge storage in metal-silicon nitride-silicon dioxide-silicon (MNOS) capacitor structures is described. The operation of the system is based on the fact that the capacitance of these structures remains constant at any flat-band voltage. The system speeds up the characterization of MNOS capacitors and allows the study of the transient (ramp) and near steady-state response of these structures. (Author)

Descriptors :   (*MEASURING INSTRUMENTS, DESIGN), (*MEMORY DEVICES, FEASIBILITY STUDIES), (*SEMICONDUCTOR DEVICES, VARIABLE CAPACITORS), (*DIELECTRIC FILMS, *TUNNELING(ELECTRONICS)), SILICON DIOXIDE, SILICON, NITRIDES, HYSTERESIS, CANADA

Subject Categories : Computer Hardware
      Test Facilities, Equipment and Methods
      Solid State Physics

Distribution Statement : APPROVED FOR PUBLIC RELEASE