Accession Number : AD0715023

Title :   Gallium Arsenide Crystal Studies.

Descriptive Note : Final rept. 1 May 68-30 Jun 69,

Corporate Author : CATHOLIC UNIV OF AMERICA WASHINGTON D C

Personal Author(s) : Pulvari,Charles F.

Report Date : 30 JUN 1969

Pagination or Media Count : 57

Abstract : The growth of bimetallic semiconductor single crystals of the III-V compounds was studied with special interest in developing well controlled crystal growth processes in order to obtain uniform and repeatable crystal qualities. An extensive bibliographical survey of past publications and actual crystal growth processes has been carried out. The various crystal growth methods, their results, the materials used as raw materials, as well as the crucible materials, etc., and a comparison between various methods, growth processes, and materials were made. The dislocation-free crystal growth method of Zimmerli was studied and the possible use of his results was considered. The effect of the substrate on the junction formation was analyzed and guiding principles for the preparation of substrates and formation of improved junctions are given. As a result of accumulated information, the concept of an improved Bridgemann method using high frequency stirring was developed in order to achieve a well-controlled growth process so that uniformity and repeatability in crystal growth should become possible. (Author)

Descriptors :   (*SINGLE CRYSTALS, *CRYSTAL GROWTH), (*GALLIUM ARSENIDES, CRYSTAL GROWTH), (*LASERS, SEMICONDUCTOR DIODES), BAND THEORY OF SOLIDS, CARRIERS(SEMICONDUCTORS), ELECTRICAL RESISTANCE, SILICON, DOPING, DISLOCATIONS

Subject Categories : Lasers and Masers
      Crystallography
      Solid State Physics

Distribution Statement : APPROVED FOR PUBLIC RELEASE