Accession Number : AD0715140

Title :   A Radiation Effects Research Program.

Descriptive Note : Annual rept. 1 Mar-31 Aug 70,

Corporate Author : NEW MEXICO UNIV ALBUQUERQUE BUREAU OF ENGINEERING RESEARCH

Personal Author(s) : Grannemann,W. W. ; Allen,R. C. , Jr. ; Boatwright,L. T. ; Byatt,W. J. ; Southward,H. D.

Report Date : SEP 1970

Pagination or Media Count : 302

Abstract : The report includes radiation effects on GaAsP and GaP schottky barrier diodes; Fabrication and electrical testing of Zn-Si and Zn-GaAsP schottky barrier diodes; The effects of neutron and gamma irradiation on diffused GaAs laser diodes; Radiation damage to epitaxial silicon measured by micro-Hall devices; Hall effect in dielectric materials; Conductance measurements on metal-insulator-semiconductor capacitors; Metal-insulator-semiconductor (MIS) capacitor studies; Transistor modeling; Transient radiation effects in silicon controlled rectifiers; Theory of avalanche breakdown in silicon II; Particle transport and band structure within imperfect crystal; Transport equations with variable coefficients. (Author)

Descriptors :   (*SEMICONDUCTORS, DAMAGE), (*SEMICONDUCTOR DEVICES, DAMAGE), (*DIELECTRICS, *DAMAGE), SEMICONDUCTOR DIODES, GALLIUM ARSENIDES, SILICON, NEUTRON REACTIONS, GAMMA RAYS, CAPACITORS, TRANSISTORS, BAND THEORY OF SOLIDS, CRYSTAL STRUCTURE, SILICON CONTROLLED RECTIFIERS, HALL EFFECT, LASERS, (U)LASERS

Subject Categories : Electrical and Electronic Equipment
      Radioactiv, Radioactive Wastes & Fission Prod

Distribution Statement : APPROVED FOR PUBLIC RELEASE