Accession Number : AD0715282

Title :   Investigation of Highly-Doped Schottky-Barrier Field-Effect Transistors,

Corporate Author : IBM WATSON RESEARCH CENTER YORKTOWN HEIGHTS N Y

Personal Author(s) : Drangeid,Karsten E.

Report Date : 16 JUN 1970

Pagination or Media Count : 17

Abstract : GaAs Schottky-barrier field-effect transistors were realized in the 1 micron structure with an f(max) up to 30 GHz (2.5 times higher than f(max) reported for other transistors). Details of measurements performed are reported and technological improvements obtained or still desired are discussed. For Si Schottky-barrier field-effect transistors, platinum and palladium as gate materials have shown improved breakdown behavior. Exploratory work has been started with devices with reduced carrier concentration at the Si-SiO2 interface to increase Schottky gate breakdown. The process of Si epitaxy has been adjusted to very low deposition rates (150 A/min) to enable controlled channel formation between 500 and 1000 A thickness. (Author)

Descriptors :   (*FIELD EFFECT TRANSISTORS, RELIABILITY(ELECTRONICS)), (*SEMICONDUCTING FILMS, EPITAXIAL GROWTH), GALLIUM ARSENIDES, SILICON, DOPING, GAIN

Subject Categories : Electrical and Electronic Equipment
      Crystallography
      Solid State Physics

Distribution Statement : APPROVED FOR PUBLIC RELEASE