Accession Number : AD0715307

Title :   Study of Process for Forming Heterojunctions by Gold-Solvent Alloying.

Descriptive Note : Final rept. 1 Mar-1 Aug 70,

Corporate Author : BATTELLE MEMORIAL INST COLUMBUS OHIO COLUMBUS LABS

Personal Author(s) : Chang,Yuan-Feng

Report Date : 08 OCT 1970

Pagination or Media Count : 18

Abstract : In the investigation of the gold-solvent alloying technique for the fabrication of heterojunctions, the criteria for obtaining good-quality Ge-GaAs heterojunctions with planar interfaces and single-crystal regrowths were determined. The alloying mixture of gold and germanium must be of homogeneous composition. The time rate of temperature rise during melting and of temperature fall during crystal growth must be very low. In addition, the temperature gradient across the solid-liquid interface must be carefully controlled during both the melting and crystal-growing periods. (Author)

Descriptors :   (*SEMICONDUCTORS, INTERFACES), GERMANIUM, GALLIUM ARSENIDES, CRYSTAL GROWTH, MANUFACTURING

Subject Categories : Solid State Physics

Distribution Statement : APPROVED FOR PUBLIC RELEASE