Accession Number : AD0715392

Title :   A Study of Electronic States and Transport in Highly Doped Semiconductors.

Descriptive Note : Summary technical rept. 1 Jun-30 Nov 70,

Corporate Author : WYOMING UNIV LARAMIE

Personal Author(s) : Nakai,Shinzo ; Morrison,John H.

Report Date : DEC 1970

Pagination or Media Count : 43

Abstract : Impurity conduction in doped semiconductors is discussed using the Green's function for high impurity concentration at temperatures near zero. A stochastic method has also been used to investigate the electronic states in an aperiodic system. It is the object of this research to develop a method to carry out a systematic study of electronic structure and conduction mechanism in random lattices. (Author)

Descriptors :   (*SEMICONDUCTORS, ELECTRICAL CONDUCTIVITY), BAND THEORY OF SOLIDS, GREEN'S FUNCTION, STOCHASTIC PROCESSES, DOPING, IMPURITIES, ANTIMONY, GERMANIUM, PHOSPHORUS, SILICON

Subject Categories : Solid State Physics

Distribution Statement : APPROVED FOR PUBLIC RELEASE