Accession Number : AD0715706
Title : Hot Carrier Mobility Effects in Magneto-Schottky-Junctions.
Descriptive Note : Research and development technical rept.,
Corporate Author : ARMY ELECTRONICS COMMAND FORT MONMOUTH N J
Personal Author(s) : Mette,H. ; Ahlstrom,E. ; Yarbrough,D.
Report Date : NOV 1970
Pagination or Media Count : 20
Abstract : The report describes a theoretical investigation of the influence of hot carrier mobilities on magnetoelectric effects in forward-biased Schottky junctions. Average energies of carriers injected over the barrier have been calculated from simple band theory for the first time and are used to plot the dependence of the average injected mobilities on forward voltage and barrier heights. The results indicate that hot electron mobility effects make a significant contribution to magnetoelectric effects and must be taken into consideration for a comprehensive theory of such phenomena. (Author)
Descriptors : (*SEMICONDUCTORS, BAND THEORY OF SOLIDS), (*CARRIERS(SEMICONDUCTORS), MOBILITY), (*SEMICONDUCTOR DIODES, MAGNETIC FIELDS), INTERFACES, KINETIC ENERGY
Subject Categories : Electrical and Electronic Equipment
Solid State Physics
Distribution Statement : APPROVED FOR PUBLIC RELEASE