Accession Number : AD0715742
Title : Electronic Structure of Amorphous and Crystalline Germanium: Photoemission and Optical Studies.
Descriptive Note : Technical rept.,
Corporate Author : STANFORD UNIV CALIF STANFORD ELECTRONICS LABS
Personal Author(s) : Donovan,Terence M.
Report Date : JUL 1970
Pagination or Media Count : 160
Abstract : Photoemission has been measured in the 1.8 - 11.8 eV spectral range for cleaved single crystal Ge and amorphous Ge films. Cesium was used to lower the photoelectric threshold and extend the measurements for photon energies less than 5 eV for both phases. Similar measurements were made in the 5 - 11.8 eV spectral range on films grown at room temperature (i.e., amorphous films) and then annealed at temperatures below and above the amorphous-crystalline transition temperature. The optical properties for amorphous films have been determined in the 0.1 - 25.0 eV spectral range from a Kramers-Kronig analysis of reflectance data and in the infrared and absorption edge region for films grown on substrates held at temperatures just below the amorphous-crystalline transition temperature. (Author)
Descriptors : (*SEMICONDUCTORS, *BAND THEORY OF SOLIDS), (*GERMANIUM, *PHOTOELECTRIC EFFECT), SEMICONDUCTING FILMS, SINGLE CRYSTALS, ANNEALING, OPTICAL PROPERTIES
Subject Categories : Solid State Physics
Distribution Statement : APPROVED FOR PUBLIC RELEASE