Accession Number : AD0716990
Title : Investigations as to the Noise Characteristics of GaAs Avalanche Transit Time Diode Oscillators.
Descriptive Note : Research and development technical rept.,
Corporate Author : ARMY ELECTRONICS COMMAND FORT MONMOUTH N J
Personal Author(s) : Baranowski,Joseph J. ; Higgins,Vincent J.
Report Date : NOV 1970
Pagination or Media Count : 17
Abstract : Gallium arsenide p-n junction avalanche transit time oscillators were characterized with respect to noise performance. The results of these measurements were compared to other p-n junction oscillators, Read diodes, and Gunn diodes. Measurements include: receiver noise, using these devices as local oscillators for both balanced and single-ended mixer configurations; AM noise sideband-to-carrier ratios; FM noise sideband-to-carrier ratios, and AM and FM noise sideband-to-carrier ratios with cavity locking; thermal noise as a function of reverse bias current and amplifier noise figure. In general, the GaAs devices were superior in all respects to the Si- p-n and Si-Read structures. It also exhibited better FM noise than the Gunn oscillator and only slightly worse AM noise. (Author)
Descriptors : (*AVALANCHE DIODES, NOISE(RADIO)), (*GALLIUM ARSENIDES, AVALANCHE DIODES), MICROWAVE OSCILLATORS
Subject Categories : Electrical and Electronic Equipment
Distribution Statement : APPROVED FOR PUBLIC RELEASE