Accession Number : AD0717645

Title :   Study of Infrared Sensitivity of Recombination-Light for Device Applications.

Descriptive Note : Semi-annual rept. no. 1, 1 Jun-30 Nov 70,

Corporate Author : ILLINOIS UNIV URBANA GASEOUS ELECTRONICS LAB

Personal Author(s) : Merkelo,Henry ; Kaplafka,James P. ; Goldstein,Ladislas

Report Date : NOV 1970

Pagination or Media Count : 39

Abstract : The results obtained during the first semi-annual period on the study of the characteristics of the recently discovered sensitivity of recombination-light to infrared (IR) radiation are reviewed. The sensitivity of recombination light to IR-radiation has been demonstrated with approximately 0.1 eV IR-photon energies in all common noble gases and is shown to be consistent with an analysis based on the photo-destruction of atoms in near-ionization-limit quantum states dominantly formed in the recombination of atomic ions and electrons and, in the case of helium, also in the recombination of diatomic molecular ions with electrons. The effect of impurities is shown to be very pronounced in cases where ionization and/or excitation energy considerations are such that the formation of near-continuum states in the resulting recombination, the IR-sensitivity of recombination-light has been demonstrated in selected continuously excited systems as well as in pulsed operation. (Author)

Descriptors :   (*INFRARED RADIATION, FREQUENCY CONVERTERS), (*QUENCHING(INHIBITION), *INFRARED IMAGE TUBES), (*FLUORESCENCE, QUENCHING(INHIBITION)), LIGHT, GASES, RECOMBINATION REACTIONS, ELECTRON TRANSITIONS, MOLECULAR ENERGY LEVELS, IONIZATION

Subject Categories : Electrooptical and Optoelectronic Devices
      Electric Power Production and Distribution

Distribution Statement : APPROVED FOR PUBLIC RELEASE