Accession Number : AD0717773
Title : Crystal Properties as Influenced by Crystallographic Imperfections.
Descriptive Note : Final rept. Mar 68-Nov 70,
Corporate Author : INTERNATIONAL BUSINESS MACHINES CORP HOPEWELL JUNCTION N Y EAST FISHKILL LAB
Personal Author(s) : Schwuttke,Guenter H.
Report Date : DEC 1970
Pagination or Media Count : 19
Abstract : The principal objective was to study the defect properties of semiconductor materials as a function of impurity concentration and ionizing radiation. Of specific interest were micro-defects in silicon after ion implantation. The report summarizes the major results of the contract work and supplies a complete list of scientific reports, presentations and publications generated by this study. (Author)
Descriptors : (*SEMICONDUCTORS, CRYSTAL DEFECTS), (*SILICON, ION BOMBARDMENT), (*SEMICONDUCTOR DEVICES, RELIABILITY(ELECTRONICS)), X RAY DIFFRACTION, SINGLE CRYSTALS, ANNEALING, ELECTRICAL PROPERTIES, IMPURITIES
Subject Categories : Electrical and Electronic Equipment
Solid State Physics
Distribution Statement : APPROVED FOR PUBLIC RELEASE