Accession Number : AD0717773

Title :   Crystal Properties as Influenced by Crystallographic Imperfections.

Descriptive Note : Final rept. Mar 68-Nov 70,

Corporate Author : INTERNATIONAL BUSINESS MACHINES CORP HOPEWELL JUNCTION N Y EAST FISHKILL LAB

Personal Author(s) : Schwuttke,Guenter H.

Report Date : DEC 1970

Pagination or Media Count : 19

Abstract : The principal objective was to study the defect properties of semiconductor materials as a function of impurity concentration and ionizing radiation. Of specific interest were micro-defects in silicon after ion implantation. The report summarizes the major results of the contract work and supplies a complete list of scientific reports, presentations and publications generated by this study. (Author)

Descriptors :   (*SEMICONDUCTORS, CRYSTAL DEFECTS), (*SILICON, ION BOMBARDMENT), (*SEMICONDUCTOR DEVICES, RELIABILITY(ELECTRONICS)), X RAY DIFFRACTION, SINGLE CRYSTALS, ANNEALING, ELECTRICAL PROPERTIES, IMPURITIES

Subject Categories : Electrical and Electronic Equipment
      Solid State Physics

Distribution Statement : APPROVED FOR PUBLIC RELEASE