Accession Number : AD0718695

Title :   Growing Epitaxial Germanium Layers from a Melt,

Corporate Author : FOREIGN TECHNOLOGY DIV WRIGHT-PATTERSON AFB OHIO

Personal Author(s) : Bolkhovityanov,Yu. B. ; Stroitelev,S. A.

Report Date : 17 NOV 1970

Pagination or Media Count : 11

Abstract : An apparatus for the growth of epitaxial Ge films from the melt is described. A Ge plate is immersed for a few sec. in a supercooled Ge melt and withdrawn; depending on the degree of supercooling, the thickness of the epitaxial layer ranges from 10 to 100 mu. The immersion and withdrawal of the plate must be rapid as possible; temperature control is critical, and it should be within plus or minus 0.1 degrees. The growth may be carried out either in vacuo or in H; epitaxial Ge layers grown in H atm. had a resistivity of 2 ohm-cm and a Hall mobility (of e) of 3000 cm(superscript2)/(V-sec). The method may also be used for the growth of InSb and GaSb epitaxial layers. (Author)

Descriptors :   (*SEMICONDUCTING FILMS, *EPITAXIAL GROWTH), (*GERMANIUM, EPITAXIAL GROWTH), CRYSTALLIZATION, SUPERCOOLING, ELECTRICAL PROPERTIES, INDIUM ANTIMONIDES, GALLIUM COMPOUNDS, ANTIMONY ALLOYS, USSR

Subject Categories : Crystallography
      Solid State Physics

Distribution Statement : APPROVED FOR PUBLIC RELEASE