Accession Number : AD0719283

Title :   Interface Phenomena in Integrated Circuit Oxides.

Descriptive Note : Final rept. 3 Mar 68-3 May 70,

Corporate Author : CALIFORNIA UNIV LOS ANGELES SCHOOL OF ENGINEERING AND APPLIED SCIENCE

Personal Author(s) : Viswanathan,Cadambanguidi R. ; Ogura,Seiki

Report Date : DEC 1970

Pagination or Media Count : 76

Abstract : The instability in MIS devices, arising due to mobile positive ions in the insulator layer was investigated experimentally and theoretically. A direct measurement of the built-in voltage in the MIS structure, viz., the voltage existing across the insulator due to interface effects, was shown to be possible using the photoelectric technique. The diffusion of ions in the oxide layer was studied and the results point out to the conclusion that the mobile ions tend to be localized either near the metal interface or near the silicon interface. Of these two, the sites near the metal interface have a larger activation energy and as such, the ions stay predominately near the metal interface. Calculations of the potential in the oxide layer, in the presence of mobile ions were carried out and found to give reasonable agreement with experimental results. The role of impurities like Al and Au was also studied. Interface Characteristics and the number of mobile ions and the number of traps were also studied for a chemically grown MNS sample. A number of problem areas requiring further investigation is also pointed out. (Author)

Descriptors :   (*SEMICONDUCTORS, INTERFACES), TRANSPORT PROPERTIES, VOLTAGE, IONS, DOPING, SILICON DIOXIDE

Subject Categories : Solid State Physics

Distribution Statement : APPROVED FOR PUBLIC RELEASE