Accession Number : AD0720931

Title :   The Synthesis of Epitaxial Gallium Arsenide Layers,

Corporate Author : FOREIGN TECHNOLOGY DIV WRIGHT-PATTERSON AFB OHIO

Personal Author(s) : Avdienko,K. I. ; Stroitelev,S. A.

Report Date : 15 JAN 1971

Pagination or Media Count : 10

Abstract : A GaAs substrate was coated with a thin layer of Ga, sealed in an ampul containing a few pieces of GaAs and the ampul was placed in a 2-zone furnace with a small temperature gradient at less than 1000 degrees. An equilibrium vapor pressure of As was established within the ampul, and as a result an epitaxial layer of GaAs grew from the Ga layer; the thickness of the epitaxial layer reached approximately 40 mu after 20-30 minutes, and decreased with increasing initial thickness of the Ga layer. The GaAs film had a single-crystal structure without stacking faults. (Author)

Descriptors :   (*SEMICONDUCTING FILMS, *EPITAXIAL GROWTH), (*GALLIUM ARSENIDES, SYNTHESIS(CHEMISTRY)), DISLOCATIONS, SINGLE CRYSTALS, METAL FILMS, USSR

Subject Categories : Crystallography
      Solid State Physics

Distribution Statement : APPROVED FOR PUBLIC RELEASE