Accession Number : AD0721294

Title :   A Survey of Second Breakdown Phenomena, Mechanisms, and Damage in Semiconductor Junction Devices.

Descriptive Note : Technical rept.,

Corporate Author : ARMY MISSILE COMMAND REDSTONE ARSENAL ALA GUIDANCE AND CONTROL DIRECTORATE

Personal Author(s) : Budenstein,Paul P.

Report Date : 10 DEC 1970

Pagination or Media Count : 69

Abstract : The report describes the phenomena associated with second breakdown. To explain these, a variety of thermal and electrical theories have been offered. None of these have earned general acceptance, although each can explain certain aspects of second breakdown. The theoretical basis of the second breakdown problem is discussed and representative theoretical treatments are presented. A new model of second breakdown, based on tunnel emission in an avalanching junction, is offered. The details of this model, however, remain to be worked out. The motivation for this work is to arrive at some conclusions on how to predict the second breakdown behavior of transistors in terms of geometry and circuital environment and, if possible, to suggest ways of improving transistor device and circuit design for better second breakdown resistance. (Author)

Descriptors :   (*TRANSISTORS, FAILURE(ELECTRONICS)), (*SEMICONDUCTOR DIODES, FAILURE(ELECTRONICS)), ELECTRICAL PROPERTIES, THERMAL RADIATION, DAMAGE, RADIATION EFFECTS, TUNNELING(ELECTRONICS), SILICON

Subject Categories : Electrical and Electronic Equipment

Distribution Statement : APPROVED FOR PUBLIC RELEASE