Accession Number : AD0721377

Title :   The Stability of SiO2 Passivation Layers.

Descriptive Note : Final rept. 12 Feb 70-12 Jan 71,

Corporate Author : BATTELLE MEMORIAL INST COLUMBUS OHIO COLUMBUS LABS

Personal Author(s) : Chang,Y. F.

Report Date : JAN 1971

Pagination or Media Count : 30

Abstract : Samples of SiO2 passivation layers were thermally grown on silicon wafers in completely dry atmospheres containing oxygen and nitrogen. The electrical characteristics of these samples in MOS capacitor structures were superior to those of wet-oxygen-grown samples. Analysis of these samples by ion-beam mass spectrometry revealed higher concentrations of impurities than those found in wet-grown SiO2 layers. The presence of certain amounts of metal impurities in the SiO2 apparently did not affect the stability of these layers. It would appear that the impurity atoms are mobile in the SiO2 only when moisture has penetrated the oxide layer. The thermal growth of SiO2 layers on silicon wafers in a completely dry atmosphere is sensitive to the condition of the quartz oxidation furnance tube. It was established that the quartz tube must be properly aged in dry oxygen before stable SiO2 layers can be produced. (Author)

Descriptors :   (*COATINGS, *SILICON DIOXIDE), (*SEMICONDUCTOR DEVICES, COATINGS), (*INTEGRATED CIRCUITS, COATINGS), STABILITY, ELECTRICAL PROPERTIES, THERMAL STRESSES, IMPURITIES, DIFFUSION, SEMICONDUCTORS

Subject Categories : Electrical and Electronic Equipment
      Coatings, Colorants and Finishes

Distribution Statement : APPROVED FOR PUBLIC RELEASE