Accession Number : AD0723300
Title : Ion Implantation and Backscattering and Channeling Effect Measurements for Analysis of Semiconductor Structures.
Descriptive Note : Final rept. Dec 67-Dec 70,
Corporate Author : CALIFORNIA INST OF TECH PASADENA CALIF DEPT OF ELECTRICAL ENGINEERING
Personal Author(s) : Gyulai,Jozsef ; Johansson,Nils G. E. ; Mayer,James W. ; Mitchell,Ian V. ; Nicolet,Marc A.
Report Date : 15 JAN 1971
Pagination or Media Count : 60
Abstract : There were two broad phases of investigation: ion implantation phenomena and evaluation of semiconductor structures by use of nuclear techniques. Both Hall and Channeling effect measurements were used to evaluate implanted layers. Evaluation of different dopant elements indicated similar behavior among species of the same column of the periodic table but different behavior between adjacent elements. During anneal sequences, enhanced diffusion of the implanted species towards the surface was found. Backscattering and channeling effect measurements were directed toward determination of the depth distribution and lattice location of dopant species and toward evaluation of the composition of dielectric layers on semiconductors. Diffusion and alloying behavior were also investigated. (Author)
Descriptors : (*SEMICONDUCTORS, CRYSTAL STRUCTURE), (*SILICON, DOPING), ION BOMBARDMENT, HALL EFFECT, BACKSCATTERING, ANNEALING, IMPURITIES, GALLIUM ARSENIDES, SILICON DIOXIDE, SILICON COMPOUNDS, NITRIDES
Subject Categories : Crystallography
Solid State Physics
Distribution Statement : APPROVED FOR PUBLIC RELEASE