Accession Number : AD0724102

Title :   Effect of Aluminum Doping on the Thermal Stability of 4H- and 6H-SiC,

Corporate Author : EMMANUEL COLL BOSTON MASS ORIENTAL SCIENCE RESEARCH LIBRARY

Personal Author(s) : Mitomo,Mamoru ; Inomata,Yoshizo ; Kumanomido,Mahito

Report Date : 17 MAR 1971

Pagination or Media Count : 22

Abstract : The effect of aluminum doping on the thermal stability of basic SiC polytypes was studied experimentally in the range 2,000-2,400C. The doping was performed by adding alumina to a mixture of powdered silicon and carbon. The relative amount of 4H increased with increasing content of aluminum in the SiC powder. The same aluminum effect was shown when high-purity alpha-SiC was used. The stability of the 4H structure by aluminum doping was attributed to lattice distortion. The 15R-type was found quasi-stable under these conditions. (Author)

Descriptors :   (*SILICON CARBIDES, *CRYSTAL GROWTH), (*CRYSTAL STRUCTURE, THERMAL STABILITY), DOPING, ALUMINUM, JAPAN

Subject Categories : Crystallography

Distribution Statement : APPROVED FOR PUBLIC RELEASE