Accession Number : AD0724103

Title :   On the Wurtzite-Type SiC Whiskers Obtained by Sublimation and the Thermal Stability of Basic SiC Polytypes,

Corporate Author : EMMANUEL COLL BOSTON MASS ORIENTAL SCIENCE RESEARCH LIBRARY

Personal Author(s) : Inomata,Yoshizo ; Inoue,Zenzaburo

Report Date : 17 MAR 1971

Pagination or Media Count : 22

Abstract : 2H-type SiC whiskers were obtained using the sublimation method. From the results of heating a powdered mixture of high-purity silicon and graphite, the thermal stability of basic SiC polytypes was discussed. The condlusions are summarized as follows: Beta-SiC crystals grow in the entire temperature range under conditions of high supersaturation; The initial phase which appears from heating Beta-SiC is mainly 6H above 1,600C and 4H or 2H below 1,400C; 2H, 3C, and 6H are stable in the range below 1,400C, 1,400-1,600C, 1,600-2,100C, and above 2,100C, respectively. 15R is unstable throughout the entire temperature range. (Author)

Descriptors :   (*WHISKERS(CRYSTALS), *SILICON CARBIDES), (*CRYSTAL STRUCTURE, THERMAL STABILITY), SUBLIMATION, CRYSTAL STRUCTURE, JAPAN

Subject Categories : Crystallography

Distribution Statement : APPROVED FOR PUBLIC RELEASE