Accession Number : AD0724705

Title :   Junction Growth Techniques for GaAs Avalanche Transit Time Devices.

Descriptive Note : Semiannual rept. 1 Jul-31 Dec 70,

Corporate Author : GTE LABS INC BAYSIDE N Y

Personal Author(s) : Black,James F. ; Deitch,Richard H.

Report Date : APR 1971

Pagination or Media Count : 37

Abstract : New techniques of liquid phase epitaxial growth have been employed to prepare GaAs wafers with thin high quality n layers and p(+) layers. Wafers have been produced in p(+)-n-n(+) configurations; with abrupt p(+)-n and abrupt n-n(+) junctions; with p(+) layers 1 to 3 micrometers thick and doping levels as high as 2 x 10 to the 19th power/cc; with n layers of average thickness 3 micrometers, electron concentration in the range 1 to 4 x 10 to the 16th power/cc and mobility greater than 5000 sq cm/V.sec at room temperature. These epitaxial layers have been grown on n(+) substrate wafers with dislocation densities ranging from 500/sq cm to about 100/sq cm, electron concentrations in the range of 1 to 4 x 10 to the 18th power and electron mobilities ranging from 2500 sq cm/V.sec to 2000 sq cm/V.sec. The procedures and apparatus used for preparation of these epitaxial wafers are described in detail. In addition, the evaluation of these epitaxial wafers by techniques of capacitance-voltage profiling, infrared interference fringe measurement and x-ray anomalous diffraction contrast topography is described. (Author)

Descriptors :   (*GALLIUM ARSENIDES, *EPITAXIAL GROWTH), (*AVALANCHE DIODES, MANUFACTURING), HALL EFFECT, INFRARED SPECTRA, TEST METHODS

Subject Categories : Electrical and Electronic Equipment
      Crystallography

Distribution Statement : APPROVED FOR PUBLIC RELEASE