Accession Number : AD0724965

Title :   Use of Electron and Ion Beams in Microelectronics,

Corporate Author : FOREIGN TECHNOLOGY DIV WRIGHT-PATTERSON AFB OHIO

Personal Author(s) : Danilin,B. S. ; Zaumysov,Yu. V. ; Shteinman,G. A.

Report Date : 01 MAR 1971

Pagination or Media Count : 22

Abstract : A review is given of the state of the art in the use of electron and ion beam techniques in forming planar integrated circuits. The advantages of the beam techniques over generally used methods such as chemical or photo etching are discussed. Advantages include: reducing the minimum size of active and passive elements to the order of a micron or less, thus increasing the frequency range to 1-10 GHz and the given packing factor elements; elimination of masks, phototemplates, etc. in circuit manufacture; quicker forming of p-n junctions in semiconductors, with improved control of carrier density; and the general possibilities of contactless control of microcircuits. Diagrams of electron beam, ion beam, and combined electron-ion beam devices are given; an example is shown in a figure. Most of the techniques, and all other hardware cited, are from Western sources. (Author)

Descriptors :   (*INTEGRATED CIRCUITS, MANUFACTURING), ION BEAMS, ELECTRON BEAMS, FILMS, NONDESTRUCTIVE TESTING, USSR

Subject Categories : Electrical and Electronic Equipment
      Mfg & Industrial Eng & Control of Product Sys

Distribution Statement : APPROVED FOR PUBLIC RELEASE