Accession Number : AD0725056

Title :   Growth and Characterization of Tetragonal (Rutile) GeO2 Crystals.

Descriptive Note : Physical sciences research papers,

Corporate Author : AIR FORCE CAMBRIDGE RESEARCH LABS L G HANSCOM FIELD MASS

Personal Author(s) : Goodrum,John W.

Report Date : 12 MAR 1971

Pagination or Media Count : 32

Abstract : The use of germanium in semiconductor devices continues in importance but adequate substrate materials and/or passivating (insulating) films for Ge are still lacking. Although such properties of the tetragonal oxide of germanium as chemical inertness and low electrical conductivity indicate it would be an excellent substrate/passivating material for Ge semiconductor devices, various attempts to prepare this oxide have met with only limited success (Albers, Valyocsik, and Mohan, 1966; Carasso and Faktor, 1965; Wilkes, 1964). This report describes a preparation method for this oxide as well as some previously unreported characteristics of the material. (Author)

Descriptors :   (*CRYSTAL GROWTH, GERMANIUM COMPOUNDS), (*SEMICONDUCTING FILMS, SUBSTRATES), ELECTROOPTICS, SEMICONDUCTOR DEVICES, LASERS, INFRARED LASERS, OPTICAL PROPERTIES, ELECTRICAL PROPERTIES, ABSORPTION SPECTRA, IMPURITIES

Subject Categories : Crystallography
      Solid State Physics

Distribution Statement : APPROVED FOR PUBLIC RELEASE