Accession Number : AD0726109

Title :   Photoelectronic Properties of Defects in Cadmium Selenide Single Crystals.

Descriptive Note : Technical rept. 1 Apr 68-1 Mar 71,

Corporate Author : AIR FORCE MATERIALS LAB WRIGHT-PATTERSON AFB OHIO

Personal Author(s) : Robinson,Arthur Lewis

Report Date : MAY 1971

Pagination or Media Count : 259

Abstract : The properties of electronically active imperfections in single crystals of CdSe have been investigated by photoelectronic techniques. High-conductivity, n-type crystals grown from the melt have been transformed to low-conductivity, photosensitive crystals by annealing under excess Se pressures and by diffusing Cu or Ag acceptor impurities. The photoelectronic properties of these crystals have been analyzed through measurements of dark conductivity, Hall effect, photoconductivity, and optical absorption. It was observed that as-grown and Cd-annealed crystals showed very low photosensitivity, whereas crystals annealed in Se vapor or diffused with acceptor impurities all showed photosensitivity. The various procedures for producinghigh-resistivity, photosensitive crystals introduced characteristic recombination centers that competed with the sensitizing centers in determining the magnitude and temperature dependence of the photoconductivity.

Descriptors :   (*SEMICONDUCTORS, CRYSTAL DEFECTS), (*CADMIUM SELENIDES, *PHOTOCONDUCTIVITY), SINGLE CRYSTALS, ANNEALING, IMPURITIES, HALL EFFECT, PHOTOSENSITIVITY, BAND THEORY OF SOLIDS, CRYSTAL GROWTH, LUMINESCENCE

Subject Categories : Solid State Physics

Distribution Statement : APPROVED FOR PUBLIC RELEASE