Accession Number : AD0727035

Title :   Research Directed Toward Preparation of Compound Semi-Conductors by Controlled Diffusion Mechanism in Gels.

Descriptive Note : Final rept. 10 Jan 67-30 May 69,

Corporate Author : NEW YORK UNIV BRONX DEPT OF CHEMICAL ENGINEERING

Personal Author(s) : Bland,Zwi ; Brenner,Walter

Report Date : MAR 1970

Pagination or Media Count : 214

Abstract : Single crystal growth in gels near ambient temperature offers many advantages, especially for substances which are slightly soluble in water and which are not easily grown from the melt or vapor. Selected group 2-6 compounds have been studied in this respect because of their potential for semiconductor applications. The role of major variables affecting nucleation and growth (including diffusion rates of reactants) was clarified. A graphical solution of the equation for diffusion rates has been developed, permitting the gel growth optimization of single crystals, particularly lead sulfide. Experimental data obtained for single crystals of lead sulfide and selected other group 2-6 compounds are summarized emphasizing electronic properties. A novel system for batch and continuous gel growth of lead sulfide crystals up to 2mm on edge near ambient temperature is described. Additional studies are suggested to broaden the applicability of crystal growth in gels. (Author)

Descriptors :   (*SEMICONDUCTORS, *CRYSTAL GROWTH), (*LEAD COMPOUNDS, CRYSTAL GROWTH), SULFIDES, SINGLE CRYSTALS, GELS, DIFFUSION, CRYSTAL STRUCTURE, X RAY DIFFRACTION, COMPUTER PROGRAMS, THESES

Subject Categories : Mfg & Industrial Eng & Control of Product Sys
      Crystallography
      Solid State Physics

Distribution Statement : APPROVED FOR PUBLIC RELEASE