Accession Number : AD0727058

Title :   Advanced Concepts of Microwave Generation and Control in Solids.

Descriptive Note : Quarterly progress rept. no. 2, 1 Jan-31 Mar 71,

Corporate Author : CORNELL UNIV ITHACA N Y SCHOOL OF ELECTRICAL ENGINEERING

Personal Author(s) : Dalman,G. C. ; Eastman,L. F. ; Lee,C. A. ; Frey,J.

Report Date : JUN 1971

Pagination or Media Count : 179

Abstract : The report deals with the progress made during the second quarterly period of a solid state microwave oscillator and amplifier research and development program. Discussed first is the progress on Gunn effect research. Work on the following specific topics is reviewed: high efficiency studies of LSA oscillators; some harmonic properties of an LSA oscillator; LSA circuit studies; operation of multiple LSA diodes; a varactor tuned Gunn oscillator; and a Gunn effect amplifier. The progress made on a parallel program on avalanche diode devices is also described. The following specific topics are reviewed: performance characteristics of subharmonically locked IMPATT diode oscillators; IMPATT efficiency and average power improvement resulting from second harmonic tuning; harmonic properties of avalanche diode oscillators; integrated IMPATT and TRAPATT oscillators; high-frequency high-efficiency avalanche oscillations; avalache device calculations in the anomalous high-efficiency regime; higher average power TRAPATT oscillator studies; and measurements of IMPATT diode parameters at microwave frequencies. Finally, the progress made on the studies of solid state materials for microwave devices are reported. The topics include: ion implantation and diffusion; vacuum epitaxial growth in silicon; microwave avalanche oscillator fabrication from bulk material; and epitaxial growth and performance of gallium arsenide. (Author)

Descriptors :   (*MICROWAVE OSCILLATORS, SEMICONDUCTOR DIODES), SPACE CHARGE, AVALANCHE DIODES, VARACTOR DIODES, HARMONIC ANALYSIS, ION BOMBARDMENT, EPITAXIAL GROWTH, GALLIUM ARSENIDES

Subject Categories : Electrical and Electronic Equipment
      Solid State Physics

Distribution Statement : APPROVED FOR PUBLIC RELEASE