Accession Number : AD0727693

Title :   Interface Phenomena in Integrated Circuit Oxides.

Descriptive Note : Semiannual rept. no. 1, 30 Jun-29 Dec 70,

Corporate Author : CALIFORNIA UNIV LOS ANGELES SCHOOL OF ENGINEERING AND APPLIED SCIENCE

Personal Author(s) : Viswanathan,Cadambanguidi R.

Report Date : MAY 1971

Pagination or Media Count : 26

Abstract : The instability in MIS devices, arising due to mobile positive ions in the insulator layer was investigated experimentally and theoretically. When ions move from one interface to another of a metal-oxide-silicon structure under the action of an external field at an elevated temperature, the charge induced in the silicon electrode and in the metal electrode changes and a current flows through the external circuit. Measurement of the charge flow indicates that the rate of ion transport is excitation limited rather than diffusion limited as previously assumed by other researchers. An investigation of the luminescence during anodic oxidation of silicon was started. The emitted light is detected by a photomultiplier and spectral curves obtained by use of eighteen interference filters. The effect of charge induced in MOS structures by ionizing radiation is being studied by photoelectric techniques and focus will be on annealing effects. (Author)

Descriptors :   (*SEMICONDUCTOR DEVICES, OXIDES), (*OXIDES, TRANSPORT PROPERTIES), IONS, LUMINESCENCE, OXIDATION, SILICON, INTEGRATED CIRCUITS

Subject Categories : Electrical and Electronic Equipment

Distribution Statement : APPROVED FOR PUBLIC RELEASE