Accession Number : AD0728508

Title :   Characteristics of Buried Layer Transistors,

Corporate Author : HARRY DIAMOND LABS WASHINGTON D C

Personal Author(s) : Dudley,E. P. ; Wetzel,G. B.

Report Date : AUG 1971

Pagination or Media Count : 28

Abstract : Electrical characteristics including collector saturation resistance, collector-to-emitter breakdown voltage, and isolation breakdown voltage were determined for several groups of transistors made with high-conductivity layers of various sizes buried in the collector region. The base widths of these transistors were varied by varying the emitter diffusion time. Both gaseous and spin-on types of dopant sources were used for the diffusions obtaining the buried layers. Buried layers of three different sizes were used with isolation moats of the same size to determine the effect of layer area on collector saturation resistance and the effect of its proximity to the isolation moat on the isolation breakdown voltage. With the largest buried layers and two collector contacts, the collector saturation was decreased an order of magnitude, from about 1500 ohms. At the same time the isolation breakdown voltage measured greater then 40 V. For one group of transistors, an average current gain of 72 was realized with collector-to-emitter breakdown voltage of 50 V. (Author)

Descriptors :   (*TRANSISTORS, ELECTRICAL PROPERTIES), SILICON, DOPING, ARSENIC, ANTIMONY, GAIN, DIFFUSION

Subject Categories : Electrical and Electronic Equipment

Distribution Statement : APPROVED FOR PUBLIC RELEASE