Accession Number : AD0728635

Title :   Investigation of Highly-Doped Schottky-Barrier Field-Effect Transistors,

Corporate Author : IBM WATSON RESEARCH CENTER YORKTOWN HEIGHTS N Y

Personal Author(s) : Drangeid,Karsten E.

Report Date : 16 DEC 1970

Pagination or Media Count : 44

Abstract : Schottky-barrier field-effect transistors with channel layers near 800 A thickness have been investigated. Investigations on palladium-silicon contacts have shown a barrier lowering exceeding the image-force lowering. Noise temperature measurements have been performed in the hot electron region to explain noise behavior of silicon Schottky-barrier FET's. The results indicate good agreement with the theory of Moll for low fields. GaAs Schottky-barrier FET's with high performance were realized in the one micron structure for gate length and contact separation. Device layout and technology are described in detail. A 17 GHz one-transistor oscillator with 4 mW output power and a four-stage amplifier operating at 14.9 GHz with a 3 dB bandwidth of 150MHz have been built with such GaAs transistors in a stripline technique. (Author)

Descriptors :   (*FIELD EFFECT TRANSISTORS, MICROWAVE FREQUENCY), (*SEMICONDUCTING FILMS, DOPING), MICROWAVE AMPLIFIERS, MICROWAVE OSCILLATORS, K BAND, NOISE(RADIO), EPITAXIAL GROWTH, GALLIUM ARSENIDES, SILICON

Subject Categories : Electrical and Electronic Equipment
      Solid State Physics

Distribution Statement : APPROVED FOR PUBLIC RELEASE