Accession Number : AD0730088

Title :   Capacitance-Voltage Characteristics of Metal Barriers on p-PbTe and p-InAs: Effects of the Inversion Layer.

Descriptive Note : Technical rept.,

Corporate Author : MASSACHUSETTS INST OF TECH CAMBRIDGE CENTER FOR MATERIALS SCIENCE AND ENGINEERING

Personal Author(s) : Walpole,James N. ; Nill,Kenneth W.

Report Date : JUN 1971

Pagination or Media Count : 38

Abstract : The dependence of the capacitance C on the voltage is derived for metal-semiconductor barriers in which there is a strong inversion layer at the metal-semiconductor interface, a case of interest in the study of surface effects and in applications for laser structures. Experimental results for evaporated lead and tin barriers on p-PbTe at 77K and for evaporated gold barriers on p-InAs at 77K and 4.2K are presented and compared to calculations performed with the inversion layer model. Both the theory and experiment show an essentially linear dependence of 1/C squared with voltage, as in the usual Schottky barrier, but a voltage intercept which is surprisingly dependent on band structure parameters, bulk carrier concentration and temperature. Reasonable quantitative agreement between the theory and experiment is obtained. In all cases the presence of a strong inversion layer can be clearly established. The analysis of the capacitance-voltage data, however, gives only a lower limit to the amount of inversion present. (Author)

Descriptors :   (*SEMICONDUCTING FILMS, TUNNELING(ELECTRONICS)), BAND THEORY OF SOLIDS, LEAD COMPOUNDS, TELLURIDES, INDIUM COMPOUNDS, ARSENIDES, ELECTRICAL PROPERTIES, SURFACE PROPERTIES

Subject Categories : Solid State Physics

Distribution Statement : APPROVED FOR PUBLIC RELEASE