Accession Number : AD0731168

Title :   Carbon Particle Inclusions in SiC Single Crystals Prepared by Sublimation,

Corporate Author : EMMANUEL COLL BOSTON MASS ORIENTAL SCIENCE RESEARCH LIBRARY

Personal Author(s) : Inomata,Yoshizo ; Tanaka,Hirokichi

Report Date : 09 AUG 1971

Pagination or Media Count : 19

Abstract : Several experiments were performed to clarify the process of carbon particle inclusion in crystals grown by Lely's sublimation procedure. Special attention was paid to the effect of the cavity wall, recrystallization temperature, and the increasing heating rate. It was found, using the technique of dark field photomicrography, that the density of the inclusions in the crystals often showed certain orientation and zonal structure. These features are explained by the microscopic temperature distribution and temperature fluctuation in a crystal. From the relation between the observed results and growth conditions, it was concluded that the phenomenon is attributed primarily to the shifting of the vapor phase composition in the growth cavity to the carbon side from the equilibrium condition. (Author)

Descriptors :   (*CRYSTAL GROWTH, *SILICON CARBIDES), SINGLE CRYSTALS, CARBON, DEFECTS(MATERIALS), SUBLIMATION, IMPURITIES, JAPAN

Subject Categories : Crystallography

Distribution Statement : APPROVED FOR PUBLIC RELEASE