Accession Number : AD0733174

Title :   Annealing Behaviour of Proton-Irradiated M.O.S. Capacitors,

Corporate Author : MANITOBA UNIV WINNIPEG DEPT OF ELECTRICAL ENGINEERING

Personal Author(s) : Card,H. C. ; Kao,K. C.

Report Date : 15 OCT 1970

Pagination or Media Count : 2

Abstract : Radiation-induced charges in m.o.s. capacitors irradiated by protons can be effectively annealed out at a temperature of 300C. An activation-energy analysis of the isochronal annealing results shows that the potential barrier created by the radiation-induced space charges in the oxice layer has an energy distribution ranging from 0.5 to 1.1 eV above the conduction band edge of silicon. (Author)

Descriptors :   (*SEMICONDUCTOR DEVICES, RADIATION DAMAGE), (*CAPACITORS, ANNEALING), PROTON BOMBARDMENT, SILICON, CANADA

Subject Categories : Electrical and Electronic Equipment

Distribution Statement : APPROVED FOR PUBLIC RELEASE