Accession Number : AD0733368
Title : Interface and Bulk Phenomena in Solid State Science.
Descriptive Note : Final scientific rept. 15 Sep 66-14 Sep 71,
Corporate Author : ILLINOIS UNIV URBANA DEPT OF ELECTRICAL ENGINEERING
Personal Author(s) : Sah,C. T.
Report Date : 30 SEP 1971
Pagination or Media Count : 22
Abstract : Experimental and theoretical studies are undertaken on the electronic properties of surface and bulk regions of the interface between silicon and silicon oxide. Two electronic processes and their relationships to the atomic structures of the interface and to the electrical and optical characteristics of MOS devices are investigated. These are (1) scattering of electrons and holes by the imperfections at the interface region and the resultant mobilities, and (2) the surface state and oxide-trap state densities and their effects on the electron and hole trapping, generation and recombination rates, and on the low frequency 1/f electrical noise. (Author)
Descriptors : (*SEMICONDUCTORS, INTERFACES), (*SEMICONDUCTOR DEVICES, NOISE(RADIO)), INTEGRATED CIRCUITS, FIELD EFFECT TRANSISTORS, CAPACITORS, SILICON DIOXIDE, SILICON, SURFACE PROPERTIES
Subject Categories : Electrical and Electronic Equipment
Solid State Physics
Distribution Statement : APPROVED FOR PUBLIC RELEASE