Accession Number : AD0736493

Title :   Vapor Deposition of Cadmium Selenide Thin Films,

Corporate Author : FOREIGN TECHNOLOGY DIV WRIGHT-PATTERSON AFB OHIO

Personal Author(s) : Kubovy,Alois ; Hamersky,Jaroslav

Report Date : 18 NOV 1971

Pagination or Media Count : 6

Abstract : A method of reproducible formation of thin films of cadmium selenide by vapor deposition is presented. The method is characterized by the fact that cadmium selenides are formed by vapor deposition on a base board preheated to a temperature of 20 to 95 degrees centrigrade. The vapor deposition is made at a given speed, of 5 to 200 x 10 to the -10th power meters per second, and the subsequent processing of the film is done in vacuum at temperatures ranging from 50 to 400 degrees centrigrade. (Author)

Descriptors :   (*VAPOR PLATING, *SEMICONDUCTING FILMS), (*CADMIUM SELENIDES, VAPOR PLATING), VACUUM APPARATUS, PATENTS, CZECHOSLOVAKIA

Subject Categories : Mfg & Industrial Eng & Control of Product Sys
      Solid State Physics

Distribution Statement : APPROVED FOR PUBLIC RELEASE