Accession Number : AD0736830

Title :   Single-Diode Vidicon.

Descriptive Note : Final rept.,

Corporate Author : TEXAS INSTRUMENTS INC DALLAS COMPONENTS GROUP

Personal Author(s) : Horak,Joseph B. ; Williams,Robert L.

Report Date : OCT 1970

Pagination or Media Count : 36

Abstract : The single-diode vidicon (SDV) that uses a single large-area N(+)P junction for imaging, was investigated for use in an electron-bombarded silicon (EBS) mode tube. A major portion of this work involved efforts to understand device operation, improve device parameters, identify problem areas associated with the device. Antimony trisulfide was used because it was easy to apply and appeared to enhance device performance. Several SDV targets fabricated in this manner were tested on a demountable test unit and three targets were mounted in a vidicon structure and characterized. Results of tests made on the prototypes fabricated have helped identify device modifications which are necessary for proper charge transfer and device operation. Several possible techniques are available for implementing the required modifications. Results from these structures compare favorably with results from standard guard-ring structures and do not require current to be supplied by the beam. The back-surface current is a very strong function of surface preparation and the type of storage film used. A sensitivity improvement by a factor of two to three at short wavelengths (approximately 0.4 microns) was noted by using very shallow junctions. This is important for the EBS tube where the carriers are generated near the surface. (Author)

Descriptors :   (*VIDICONS, ELECTRON TUBE TARGETS), (*ELECTRON TUBE TARGETS, *SEMICONDUCTOR DIODES), SILICON, MEMORY DEVICES, ANTIMONY COMPOUNDS, SULFIDES, FILMS

Subject Categories : Electrooptical and Optoelectronic Devices

Distribution Statement : APPROVED FOR PUBLIC RELEASE