Accession Number : AD0737112

Title :   Zero-Bias Contact Resistances of Au-GaAs Schottky Barriers.

Descriptive Note : Rept. for Jan 69-Jun 70,

Corporate Author : AEROSPACE CORP EL SEGUNDO CALIF LAB OPERATIONS

Personal Author(s) : McColl,Malcolm M. ; Millea,Michael F. ; Mead,Carver A.

Report Date : 01 FEB 1972

Pagination or Media Count : 33

Abstract : The contact resistances of gold-GaAs Schottky barriers have been measured at liquid nitrogen temperatures over the range of electron concentrations from 3.2 X 10 to the 18th power to 2.4 X 10 to the 19th power/cc. The theoretical treatment is based on that of Padovani and Stratton but is modified to include Franz's two-band model for the imaginary wave vector of the tunneling electrons and Conley and Mahan's correction to the space-charge potential in degenerate semiconductors. The results correlate well with the theory in the 3.2 X 10 to the 18th power to 5.6 X 10 to the 18th power/cc range of concentrations. The theory must be extended to include the effects of fluctuating depletion width (a suggestion originally made by Bethe) to adequately explain the low contact resistances obserbed with the heaviest doped GaAs. This material is a degenerate and heavily compensated tin alloy regrowth commonly used as an ohmic contact. (Author)

Descriptors :   (*SEMICONDUCTORS, TUNNELING(ELECTRONICS)), (*GALLIUM ARSENIDES, ELECTRIC TERMINALS), HALL EFFECT, FIELD EMISSION, ELECTRICAL RESISTANCE, CRYOGENICS, GOLD, TIN ALLOYS, DOPING

Subject Categories : Electrical and Electronic Equipment
      Solid State Physics

Distribution Statement : APPROVED FOR PUBLIC RELEASE