Accession Number : AD0737345
Title : Image Conversion Panel Techniques Using Direct Carrier Injection (Diode Development).
Descriptive Note : Semiannual rept. 1 Apr-30 Sep 71,
Corporate Author : HUGHES RESEARCH LABS MALIBU CALIF
Personal Author(s) : Baird,J. M.
Report Date : JAN 1972
Pagination or Media Count : 60
Abstract : Large p-i-n diode structures suitable for use in millimeter wave image conversion panels have been developed. Typical dimensions are 0.25 cm in width by 0.28 cm in length by 0.11 cm in thickness between injecting contacts. Ion implanted arsenic and alloyed aluminum form the n and p junctions, respectively, on 18 kiloohm - cm silicon. Image conversion panels operating at 10 frames/sec and containing up to 1000 diode elements can be constructed using the present diodes. (Author)
Descriptors : (*SEMICONDUCTOR DIODES, MANUFACTURING), (*SCREENS(DISPLAYS), SEMICONDUCTOR DIODES), (*IMAGE CONVERTERS, MILLIMETER WAVES), ARSENIC ALLOYS, ALUMINUM ALLOYS, SILICON, ION BOMBARDMENT, ELECTRICAL PROPERTIES, WAVEGUIDES
Subject Categories : Electrical and Electronic Equipment
Solid State Physics
Distribution Statement : APPROVED FOR PUBLIC RELEASE