Accession Number : AD0737595

Title :   Field-Effect Transistor RF Power Amplifiers.

Descriptive Note : Research and development technical rept.,

Corporate Author : ARMY ELECTRONICS COMMAND FORT MONMOUTH N J

Personal Author(s) : Ringel,Martin

Report Date : JUL 1971

Pagination or Media Count : 41

Abstract : The report documents the results of a series of tests devised to evaluate state-of-the-art field-effect transistors (FETs) as RF power amplifiers. Power output, gain and efficiency are studied; special attention is given to reliability and intermodulation distortion (IMD) evaluation. Conclusions drawn from the data indicate that integration of FETs in their present form into RF power amplifier designs is not feasible. Recommendations are made to modify present device designs to remove operational restrictions. (Author)

Descriptors :   (*POWER AMPLIFIERS, *FIELD EFFECT TRANSISTORS), (*TRANSISTOR AMPLIFIERS, POWER AMPLIFIERS), RADIOFREQUENCY POWER, RELIABILITY(ELECTRONICS), BROADBAND

Subject Categories : Electrical and Electronic Equipment

Distribution Statement : APPROVED FOR PUBLIC RELEASE